Kinetic versus Thermodynamic Control over Growth Process of Electrodeposited Bi/BiSb Superlattice Nanowires
- 26 March 2008
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 8 (5), 1286-1290
- https://doi.org/10.1021/nl073039b
Abstract
The growth mechanism of the electrodeposited single crystalline nanowires is generally considered to follow a three-dimensional to two-dimensional (2D) transition mode, and as for the 2D growth, it is ordinarily considered as a plane growth mode (layer-by-layer growth mechanism). We report in this Letter the growth of Bi/BiSb superlattice nanowires by adopting a charge-controlled pulse electrodeposition technique, and to our best knowledge, different growth modes of the nanowires, the 2D plane growth mode, the tilted plane growth mode, and the curved plane growth mode, were first observed. These growth modes were gathered and analyzed from the perspectives of crystal growth as well as kinetics and thermodynamics. It is shown that the superlattice nanowires are good structures for studying the growth mechanism of electrodeposited nanowires. This work will deeply benefit the understanding of the growth process of the electrodeposited nanowires and provide important experiment data to crystal growth theory.Keywords
This publication has 38 references indexed in Scilit:
- Electrodeposition of Thermoelectric Superlattice NanowiresAdvanced Materials, 2007
- Effective Deposition Potential Induced Size-Dependent Orientation Growth of Bi−Sb Alloy Nanowire ArraysThe Journal of Physical Chemistry B, 2006
- Massive Fabrication of Free-Standing One-Dimensional Co/Pt Nanostructures and Modulation of Ferromagnetism via a Programmable Barcode Layer EffectNano Letters, 2005
- Ordered Ni−Cu Nanowire Array with Enhanced CoercivityChemistry of Materials, 2003
- Characterizing the Structure and Properties of Individual Wire-Like NanoentitiesAdvanced Materials, 2000
- ElectrocrystallizationElectrochimica Acta, 2000
- Electrodeposition of Textured Ceramic Superlattices in the Pb−Tl−O SystemChemistry of Materials, 1997
- Transition from Island Growth to Step-Flow Growth for Si/Si(100) EpitaxyPhysical Review Letters, 1997
- Kinetics of interlayer transport prior to nucleationPhysical Review B, 1995
- Importance of the additional step-edge barrier in determining film morphology during epitaxial growthPhysical Review B, 1995