GaN-based green laser diodes
- 1 November 2016
- journal article
- Published by IOP Publishing in Journal of Semiconductors
- Vol. 37 (11), 111001
- https://doi.org/10.1088/1674-4926/37/11/111001
Abstract
Recently, many groups have focused on the development of GaN-based green LDs to meet the demand for laser display. Great progresses have been achieved in the past few years even that many challenges exist. In this article, we analysis the challenges to develop GaN-based green LDs, and then the approaches to improve the green LD structure in the aspect of crystalline quality, electrical properties, and epitaxial layer structure are reviewed, especially the work we have done.Keywords
This publication has 74 references indexed in Scilit:
- Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materialsProgress in Crystal Growth and Characterization of Materials, 2016
- Gallium Indium Nitride-Based Green LasersJournal of Lightwave Technology, 2011
- The Green Laser Diode: Completing the RainbowOptics and Photonics News, 2011
- Progress of blue and green InGaN laser diodesPublished by SPIE-Intl Soc Optical Eng ,2010
- Laser diodes go greenNature Photonics, 2009
- Quality and thermal stability of thin InGaN filmsJournal of Crystal Growth, 2009
- Visible laser and laser array sources for projection displaysPublished by SPIE-Intl Soc Optical Eng ,2006
- High-power and wide wavelength range GaN-based laser diodesPublished by SPIE-Intl Soc Optical Eng ,2006
- Wavelength Dependence of InGaN Laser Diode CharacteristicsJapanese Journal of Applied Physics, 2001
- Growth and applications of Group III-nitridesJournal of Physics D: Applied Physics, 1998