Highly efficient 2.7-2.9GHz class-F and inverse class-F power amplifiers in GaN HEMT technology
- 1 January 2013
- journal article
- Published by Institute of Electronics, Information and Communications Engineers (IEICE) in IEICE Electronics Express
- Vol. 10 (7), 20130132
- https://doi.org/10.1587/elex.10.20130132
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- A Class-F Power Amplifier With CMRCIEEE Microwave and Wireless Components Letters, 2010
- An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- Inverse Class F Power Amplifier for WiMAX Applications with 74% Efficiency at 2.45 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2009
- High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2008