Investigation of the interaction of a laser pulse with a preformed Gaussian Sn plume for an extreme ultraviolet lithography source

Abstract

The interaction of a laser pulse with a Sn preplasma formed by a low energy prepulse was investigated for an extreme ultraviolet(EUV)lithography light source. A much lower ion kinetic energy and nearly the same conversion efficiency from laser to in-band (2% bandwidth) 13.5 nm EUV light were simultaneously observed as compared with those from the direct interaction with a solid surface. The reason comes from the interaction of the laser pulse with a smooth preplume induced by the prepulse. The density profile of the preplume was measured with time-resolved shadowgraphy and could be fitted with a Gaussian function. The energy of the ions located at the flux peak E p scales with the length of the preplume l s as E p ∝ 1 ∕ l s . Laser absorption in the low-density preplume and ion acceleration during plasma expansion are discussed. This result provides a general way to control particle energy from a laser plasma interaction.