Electrical behaviour of electron-beam-evaporated yttrium oxide thin films on silicon
- 1 April 1991
- journal article
- Published by Elsevier BV in Thin Solid Films
- Vol. 199 (1), 1-8
- https://doi.org/10.1016/0040-6090(91)90045-y
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuitsIEEE Electron Device Letters, 1988
- Study of thermally oxidized yttrium films on siliconApplied Physics Letters, 1987
- Some properties of crystallized tantalum pentoxide thin films on siliconJournal of Applied Physics, 1984
- Dielectric Properties of Y2O3 Thin Films Prepared by Vacuum EvaporationJapanese Journal of Applied Physics, 1970