Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment
Open Access
- 1 November 2010
- Vol. 3 (11), 4892-4914
- https://doi.org/10.3390/ma3114892
Abstract
Doping limits, band gaps, work functions and energy band alignments of undoped and donor-doped transparent conducting oxides Zn0, In2O3, and SnO2 as accessed by X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) are summarized and compared. The presented collection provides an extensive data set of technologically relevant electronic properties of photovoltaic transparent electrode materials and illustrates how these relate to the underlying defect chemistry, the dependence of surface dipoles on crystallographic orientation and/or surface termination, and Fermi level pinning.This publication has 67 references indexed in Scilit:
- Surface potentials of magnetron sputtered transparent conducting oxidesThin Solid Films, 2009
- Electronic structure of In2O3 from resonant x-ray emission spectroscopyApplied Physics Letters, 2009
- Nature of the Band Gap ofRevealed by First-Principles Calculations and X-Ray SpectroscopyPhysical Review Letters, 2008
- Transparent Conducting Oxides for PhotovoltaicsMRS Bulletin, 2007
- Transparent conductors and buffer layers for CdTe solar cellsThin Solid Films, 2005
- Band alignment at the i-ZnO/CdS interface in Cu(In,Ga)(S,Se)2 thin-film solar cellsApplied Physics Letters, 2004
- Practical doping principlesApplied Physics Letters, 2003
- The screening response of a dilute electron gas in core level photoemission from Sb-doped SnO2Journal of Electron Spectroscopy and Related Phenomena, 2003
- Energy structures of molecular semiconductors contacting metals under air studied by the diffusion potential measurements and the Kelvin probe techniqueThin Solid Films, 2000
- Influence of the surface reconstruction on the work function and surface conductance of (110)SnO2Applications of Surface Science, 1982