Mechanism for resistive switching in an oxide-based electrochemical metallization memory
- 13 February 2012
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 100 (7)
- https://doi.org/10.1063/1.3683523
Abstract
A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide- and selenide-based ones in the resistive switching mechanism.Keywords
This publication has 40 references indexed in Scilit:
- Electrochemical metallization memories—fundamentals, applications, prospectsNanotechnology, 2011
- Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS processSolid-State Electronics, 2011
- Investigation of the Reliability Behavior of Conductive-Bridging Memory CellsIEEE Electron Device Letters, 2009
- Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and ChallengesAdvanced Materials, 2009
- Electrical field induced precipitation reaction and percolation in Ag30Ge17Se53 amorphous electrolyte filmsApplied Physics Letters, 2009
- Voltage-Driven On–Off Transition and Tradeoff With Program and Erase Current in Programmable Metallization Cell (PMC) MemoryIEEE Electron Device Letters, 2009
- Selection of Optimized Materials for CBRAM Based on HT-XRD and Electrical Test ResultsJournal of the Electrochemical Society, 2009
- Nanoionics-based resistive switching memoriesNature Materials, 2007
- An Embeddable Multilevel-Cell Solid Electrolyte Memory ArrayIEEE Journal of Solid-State Circuits, 2007
- Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory DevicesIEEE Electron Device Letters, 2006