HIGH-DIELECTRIC CONSTANT THIN FILMS FOR DYNAMIC RANDOM ACCESS MEMORIES (DRAM)
- 1 August 1998
- journal article
- Published by Annual Reviews in Annual Review of Materials Science
- Vol. 28 (1), 79-100
- https://doi.org/10.1146/annurev.matsci.28.1.79
Abstract
▪ Abstract We discuss high-dielectric films, in general, oxide ferroelectrics based on simple perovskite structures and related Aurivillius-phase layered structure perovskites employed as thin-film capacitors in dynamic random access memories (DRAMs). Emphasis is on breakdown mechanisms and limits, leakage currents, electrodes and electrode interfaces, scaling to submicron geometries, and deposition techniques.Keywords
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