A polaronic stacking fault defect model for CaCu3Ti4O12material: an approach for the origin of the huge dielectric constant and semiconducting coexistent features
- 9 February 2009
- journal article
- research article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
Abstract
This paper proposes a polaronic stacking fault defect model as the origin of the huge dielectric properties in CaCu3Ti4O12 (CCTO) materials. The model reconciles the opposing views of researchers on both sides of the intrinsic versus extrinsic debate about the origin of the unusually high values of the dielectric constant measured for CCTO in its various forms. Therefore, by considering stacking fault as the origin of the high dielectric constant phenomena, it was shown that the internal barrier layer capacitance mechanism is enhanced by another similar, but different in nature, mechanism that operates in the nanoscale range due to polaron defects associated with stacking fault, a mechanism that was referred to as nanoscale barrier layer capacitance (NBLC). The NBLC approach explains the origin of the CCTO's huge dielectric constant coexisting with semiconducting features.This publication has 33 references indexed in Scilit:
- Evidence for the existence of a metal-insulator-semiconductor junction at the electrode interfaces of CaCu3Ti4O12 thin film capacitorsApplied Physics Letters, 2007
- Structural Model of Planar Defects in CaCu3Ti4O12 Exhibiting a Giant Dielectric ConstantChemistry of Materials, 2006
- Characterization of grain boundary impedances in fine- and coarse-grainedceramicsPhysical Review B, 2006
- Dielectric dispersion of CaCu3Ti4O12 ceramics at high temperaturesApplied Physics Letters, 2005
- Evidence for internal resistive barriers in a crystal of the giant dielectric constant material: CaCu3Ti4O12Solid State Communications, 2005
- Electrode and grain-boundary effects on the conductivity of CaCu3Ti4O12Applied Physics Letters, 2005
- Giant Barrier Layer Capacitance Effects in CaCu3Ti4O12 CeramicsAdvanced Materials, 2002
- CaCu 3 Ti 4 O 12 : One-step internal barrier layer capacitorApplied Physics Letters, 2002
- Giant dielectric constant response in a copper-titanateSolid State Communications, 2000
- High Dielectric Constant in ACu3Ti4O12 and ACu3Ti3FeO12 PhasesJournal of Solid State Chemistry, 2000