A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology
- 22 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Silicon‐on‐lnsulator Devices for High Voltage and Power IC ApplicationsJournal of the Electrochemical Society, 1994
- Theory of the electrical and photovoltaic properties of polycrystalline siliconJournal of Applied Physics, 1980
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975