Comparison of ultra-shallow junctions with PLAD and beamline implantation
- 10 July 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Plasma doping system for 200 and 300 mm wafersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Plasma doping for shallow junctionsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999