Quantum Hall effect at a four-terminal junction

Abstract
A quantum-mechanical calculation is made of charged-particle motion at a four-terminal junction of narrow wires in the presence of a magnetic field of arbitrary strength. The scattering probabilities strongly reflect the influence of quantum effects of the junction, including subband thresholds and virtual resonant states. The Hall resistance calculated from them may depart considerably from the classic wide-wire result. Physical features are related to the emergence of pinned Landau levels as the field strength increases.