Crystalline quality and surface morphology of (100) CeO2 thin films grown on sapphire substrates by solid source metalorganic chemical vapor deposition
Open Access
- 2 November 1995
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 156 (3), 227-234
- https://doi.org/10.1016/0022-0248(95)00253-7
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Epitaxial CeO2 buffer layers for YBa2Cu3O7−δ films on sapphireJournal of Applied Physics, 1993
- Solid source MOCVD for the epitaxial growth of thin oxide filmsJournal of Crystal Growth, 1993
- Type-B epitaxial growth of CeO2 thin film on Si(111) substrateJournal of Crystal Growth, 1992
- a-axis oriented YBa2Cu3O7−x thin films on Si with CeO2 buffer layersApplied Physics Letters, 1991
- Epitaxial Y1Ba2Cu3O7 thin films on CeO2 buffer layers on sapphire substratesJournal of Applied Physics, 1991
- Heteroepitaxial Growth of CeO2(001) Films on Si(001) Substrates by Pulsed Laser Deposition in Ultrahigh VacuumJapanese Journal of Applied Physics, 1991
- Epitaxial CeO2 films as buffer layers for high-temperature superconducting thin filmsApplied Physics Letters, 1991
- In Situ RHEED Observation of CeO2 Film Growth on Si by Laser Ablation Deposition in Ultrahigh-VacuumJapanese Journal of Applied Physics, 1990
- Epitaxial growth of CeO2 layers on siliconApplied Physics Letters, 1990
- Thermodynamic studies of the phase relationships of nonstoichiometric cerium oxides at higher temperaturesJournal of Solid State Chemistry, 1976