On-chip integration of suspended InGaN/GaN multiple-quantum-well devices with versatile functionalities
- 9 March 2016
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 24 (6), 6004-10
- https://doi.org/10.1364/oe.24.006004
Abstract
We propose, fabricate and demonstrate on-chip photonic integration of suspended InGaN/GaN multiple quantum wells (MQWs) devices on the GaN-on-silicon platform. Both silicon removal and back wafer etching are conducted to obtain membrane-type devices, and suspended waveguides are used for the connection between p-n junction InGaN/GaN MQWs devices. As an in-plane data transmission system, the middle p-n junction InGaN/GaN MQWs device is used as a light emitting diode (LED) to deliver signals by modulating the intensity of the emitted light, and the other two devices act as photodetectors (PDs) to sense the light guided by the suspended waveguide and convert the photons into electrons, achieving 1 × 2 in-plane information transmission via visible light. Correspondingly, the three devices can function as independent PDs to realize multiple receivers for free space visible light communication. Further, the on-chip photonic platform can be used as an active electro-optical sensing system when the middle device acts as a PD and the other two devices serve as LEDs. The experimental results show that the auxiliary LED sources can enhance the amplitude of the induced photocurrent.Keywords
Funding Information
- National Natural Science Foundation of China (NSFC) (61322112, 61531166004)
- Research Project (2014CB360507, BJ211026, RLD201204)
This publication has 26 references indexed in Scilit:
- Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistorsOptics Express, 2014
- Integrated Photonic Platform Based on InGaN/GaN Nanowire Emitters and DetectorsNano Letters, 2014
- Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistorsApplied Physics Letters, 2014
- Monolithic Integration of AlGaN/GaN HEMT on LED by MOCVDIEEE Electron Device Letters, 2014
- On-Chip Optical Interconnects Made with Gallium Nitride NanowiresNano Letters, 2013
- Nanoscale materials and devices for future communication networksIEEE Communications Magazine, 2010
- Nanowire photonicsNature Photonics, 2009
- (Al,In,Ga)N‐based photodetectors. Some materials issuesPhysica Status Solidi (b), 2007
- Nitride-based light emitting diode and photodetector dual function devices with InGaN/GaN multiple quantum well structuresSolid-State Electronics, 2005
- Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)IEEE Electron Device Letters, 2005