Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
- 16 December 2008
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 101 (25), 257401
- https://doi.org/10.1103/physrevlett.101.257401
Abstract
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and antisymmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
Keywords
This publication has 18 references indexed in Scilit:
- Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistorNature Nanotechnology, 2008
- Gate-induced insulating state in bilayer graphene devicesNature Materials, 2007
- Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field EffectPhysical Review Letters, 2007
- Soldering to a single atomic layerApplied Physics Letters, 2007
- Anomaly of Optical Phonons in Bilayer GrapheneJournal of the Physics Society Japan, 2007
- Electric Field Effect Tuning of Electron-Phonon Coupling in GraphenePhysical Review Letters, 2007
- Breakdown of the adiabatic Born–Oppenheimer approximation in grapheneNature Materials, 2007
- Nonadiabatic Kohn Anomaly in a Doped Graphene MonolayerPhysical Review Letters, 2006
- Anomaly of Optical Phonon in Monolayer GrapheneJournal of the Physics Society Japan, 2006
- Kohn Anomalies and Electron-Phonon Interactions in GraphitePhysical Review Letters, 2004