Effect of 50 MeV Li3 +irradiation on structural and electrical properties of Mn-doped ZnO
- 4 May 2011
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 23 (20), 205801
- https://doi.org/10.1088/0953-8984/23/20/205801
Abstract
The present work aims to study the effect of ion irradiation on structural and electrical properties and their correlation with the defects in the Zn(1 - x)Mn(x)O-type system. Zn(1 - x)Mn(x)O (x = 0.02, 0.04) samples have been synthesized by the solid-state reaction method and have been irradiated with 50 MeV Li(3+) ions. The concomitant changes have been probed by x-ray diffraction (XRD), temperature-dependent electrical resistivity and positron annihilation lifetime (PAL) spectroscopy. The XRD result shows a single-phase wurtzite structure for Zn(0.98)Mn(0.02)O, whereas for the Zn(0.96)Mn(0.04)O sample an impurity phase has been found, apart from the usual peaks of ZnO. Ion irradiation removes this impurity peak. The grain size of the samples is found to be uniform. For Zn(0.98)Mn(0.02)O, the observed sharp decrease in room temperature resistivity (ρ(RT)) with irradiation is consistent with the lowering of the full width at half maximum of the XRD peaks. However, for Zn(0.96)Mn(0.04)O, ρ(RT) decreases for the initial fluence but increases for a further increase in fluence. All the irradiated Zn(0.98)Mn(0.02)O samples show a metal-semiconductor transition in temperature-dependent resistivity measurements at low temperature. But all the irradiated Zn(0.96)Mn(0.04)O samples show a semiconducting nature in the whole range of temperatures. Results of room temperature resistivity, XRD and PAL measurements are consistent with each other.Keywords
This publication has 45 references indexed in Scilit:
- Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO filmsJournal of Applied Physics, 2009
- Magnetization study of nanograined pure and Mn-doped ZnO films: Formation of a ferromagnetic grain-boundary foamPhysical Review B, 2009
- Structure and magnetic properties of Fe-doped ZnO prepared by the sol–gel methodJournal of Physics: Condensed Matter, 2009
- Ferromagnetic properties of the Zn–Mn–O systemJournal of Physics: Condensed Matter, 2008
- Two Magnetic Regimes in Doped ZnO Corresponding to a Dilute Magnetic Semiconductor and a Dilute Magnetic InsulatorPhysical Review Letters, 2008
- Reentrant ferromagnetism in a class of diluted magnetic semiconductorsPhysical Review B, 2007
- High-temperature ferromagnetism in Mn-doped ZnO nanowiresApplied Physics Letters, 2006
- Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnONature Materials, 2003
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Magnetotransport and magnetization properties of p-type , a new III - V diluted magnetic semiconductorJournal of Physics: Condensed Matter, 1997