Hydrogen Passivation of B-O Defects in Czochralski Silicon
Open Access
- 5 September 2013
- journal article
- Published by Elsevier BV in Energy Procedia
- Vol. 38, 561-570
- https://doi.org/10.1016/j.egypro.2013.07.317
Abstract
No abstract availableKeywords
This publication has 43 references indexed in Scilit:
- Impact of Hydrogen Concentration on the Regeneration of Light Induced DegradationEnergy Procedia, 2011
- Impact of oxygen on the permanent deactivation of boron–oxygen-related recombination centers in crystalline siliconJournal of Applied Physics, 2010
- Investigations on the long time behavior of the metastable boron–oxygen complex in crystalline siliconProgress In Photovoltaics, 2007
- Self-consistent calibration of photoluminescence and photoconductance lifetime measurementsApplied Physics Letters, 2005
- Self-consistent determination of the generation rate from photoconductance measurementsApplied Physics Letters, 2004
- Degradation of Boron-Doped Czochralski-Grown Silicon Solar CellsPhysical Review Letters, 2004
- Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline siliconApplied Physics Letters, 2003
- Suppression of light degradation of carrier lifetimes in low-resistivity CZ–Si solar cellsSolar Energy Materials and Solar Cells, 2000
- A Two-Step Low-Temperature Process For A P-N Junction Formation Due To Hydrogen Enhanced Thermal Donor Formation In P-Type Czochralski SiliconMRS Proceedings, 1998
- On the solubility and diffusion coefficient of tritium in single crystals of siliconThe International Journal of Applied Radiation and Isotopes, 1968