Nanoscale Surface Roughness Effects on THz Vacuum Electron Device Performance
- 25 November 2015
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nanotechnology
- Vol. 15 (1), 85-93
- https://doi.org/10.1109/tnano.2015.2503984
Abstract
Vacuum electron devices are the most promising solution for the generation of watt-level power at millimeter wave and terahertz frequencies. However, the three-dimensional nature of metal structures required to provide an effective interaction between an electron beam and THz signal poses significant fabrication challenges. At increasing frequency, losses present a serious detrimental effect on performance. In particular, the skin depth, on the order of one hundred nanometers or less, constrains the maximum acceptable surface roughness of the metal surfaces to be below those values. Microfabrication techniques have proven, in principle, to achieve values of surface roughness at the nanometer scale; however, the use of different metals and affordable microfabrication techniques requires further investigation for a repeatable quality of the metal surfaces. This paper compares, for the first time, the nanoscale surface roughness of metal THz waveguides realized by the main microfabrication techniques. In particular, two significant examples are considered: a 0.346-THz backward wave tube oscillator and a 0.263-THz traveling wave tube.Keywords
Funding Information
- U.K. EPSRC (EP/L026597/1)
- DARPA (G8U543366)
- NSF MRI (CHE-1429258)
- DOE NSTX (DE-FG02–99ER54518)
- DOD (M67854–06–1–5118)
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