Influence of Zr on Thermal Stability and Microstructure of Sb2Te Film
- 20 January 2021
- journal article
- research article
- Published by The Electrochemical Society in ECS Journal of Solid State Science and Technology
- Vol. 10 (2), 024002
- https://doi.org/10.1149/2162-8777/abdddb
Abstract
The influence of Zr on crystallization behavior of Sb2Te films were investigated systematically. With the increase of Zr from 0 to 8 at.%, the crystalline temperature of Zr-Sb2Te improves from 140 oC to 210 oC, and the data retention maintaining for 10 year significantly increases from 48.9 oC to 115.1 oC. All of the crystalline Zr-Sb2Te films retain the stable phase of Sb2Te without phase separation, which has advantages in endurance of the phase change device. The Zr atoms form chemical bonds with Sb and Te, which leads to the improvement in thermal stability of the amorphous Sb2Te. The grain size is significantly refined by Zr doping, which results in the increasement of the crystalline resistivity. These results could pave the way for Zr-Sb-Te to developing the nonvolatile and reconfigurable devices.Keywords
Funding Information
- National Natural Science Foundation of China (61874062)
This publication has 20 references indexed in Scilit:
- CrxSb2Te1 materials for phase change memory with high speed and good thermal stability performanceJournal of Materials Science: Materials in Electronics, 2015
- Phase transition characteristics of Al-Sb phase change materials for phase change memory applicationApplied Physics Letters, 2013
- Improved phase-change characteristics of Zn-doped amorphous Sb7Te3 films for high-speed and low-power phase change memoryApplied Physics Letters, 2013
- W-Sb-Te phase-change material: A candidate for the trade-off between programming speed and data retentionApplied Physics Letters, 2012
- Investigation of CuSb4Te2 alloy for high-speed phase change random access memory applicationsApplied Physics Letters, 2012
- Advantages of SixSb2Te phase-change material and its applications in phase-change random access memoryScripta Materialia, 2011
- Ge–Sb–Te thin films deposited by pulsed laser: An ellipsometry and Raman scattering spectroscopy studyJournal of Applied Physics, 2009
- Rebonding of Se to As and Ge in Ge33As12Se55 films upon thermal annealing: Evidence from x-ray photoelectron spectra investigationsJournal of Applied Physics, 2007
- Crystal Structure, Electronic Structure, and Physical Properties of Two New Antimonide−Tellurides: ZrSbTe and HfSbTeChemistry of Materials, 2007
- Impurity blocking of crystal growth: a Monte Carlo studyJournal of Crystal Growth, 1998