Monte Carlo analysis of terahertz oscillations of photoexcited carriers in GaAsstructures
- 6 October 2006
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 74 (16), 165305
- https://doi.org/10.1103/physrevb.74.165305
Abstract
Pulsed terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs structures is studied by Monte Carlo simulations. The conduction band composed from , , and valleys, and the valence band composed from heavy, light, and split-off subbands, are considered in the simulations. The Pauli exclusion principle and the intercarrier scattering between electrons and holes are taken into account self-consistently with the time- and position-dependent carrier density and momentum distribution. Good agreement between Monte Carlo results and experimental data is obtained. The simplified hydrodynamic model of the transient dynamics of the photoexcited carriers is suggested. The proposed model accurately reproduces Monte Carlo results when the excitation is considered to be spatially uniform.
Keywords
This publication has 36 references indexed in Scilit:
- Terahertz emission from (100) InAs surfaces at high excitation fluencesApplied Physics Letters, 2004
- Competing terahertz radiation mechanisms in semi-insulating InPat high-density excitationApplied Physics Letters, 2004
- Broadband Terahertz Radiation Emitter Using Femtosecond-Laser-Irradiated n-Type InAs under Magnetic FieldJapanese Journal of Applied Physics, 2004
- Polarity reversal of terahertz waves radiated from semi-insulating InP surfaces induced by temperaturePhysical Review B, 2003
- Study of terahertz radiation from InAs and InSbJournal of Applied Physics, 2002
- Terahertz emission from GaAs and InAs in a magnetic fieldPhysical Review B, 2001
- Coherent plasmons in-doped GaAsPhysical Review B, 1998
- Subpicosecond carrier transport in GaAs surface-space-charge fieldsPhysical Review B, 1993
- Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond opticsJournal of Applied Physics, 1992
- Generation of femtosecond electromagnetic pulses from semiconductor surfacesApplied Physics Letters, 1990