Oxygen precipitation in silicon during CMOS processing: an FTIR microspectroscopic, X-ray topographic and TEM study of spatial variation in defect formation
- 1 September 1989
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (9), 701-710
- https://doi.org/10.1088/0268-1242/4/9/001
Abstract
No abstract availableKeywords
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