Detection of hydrogen-plasma-induced defects in Si by positron annihilation
- 28 March 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (13), 1684-1686
- https://doi.org/10.1063/1.111831
Abstract
We report a positron annihilation study of defects created in Si by rf hydrogen-plasma exposure at 275 °C. Analysis of positron annihilation spectroscopy data indicates voidlike structures in a defective ayer extending to ≊14 nm from the surface at a concentration of 1.9±0.5×1020 cm−3. The Doppler broadening parameter for the annihilation gamma rays is strongly correlated to the hydrogen coverage of the void surfaces, voids remain in the Si to at least 800 °C while the hydrogen is desorbed from their surfaces between 600 and 800 °C.Keywords
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