Picosecond laser sputtering of sapphire at 266 nm
- 13 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (20), 2045-2047
- https://doi.org/10.1063/1.102100
Abstract
We observe that 266 nm laser pulses of 30 ps duration and fluence near 10 J/cm2 causes reproducible surfacesputtering and etching of crystalline sapphire in air. The etching rate for the initial ten pulses is relatively slow, 0.04 μm/pulse, producing a smooth surface of the etched area and a broad‐angle plume emission. After some 20 pulses, the etching rate is dramatically faster, 0.5 μm/pulse, producing a rough etchedsurface and a plume composed of broad‐angle emission as well as a narrow perpendicular jet emission. Micron‐sized depressions can be made on the sapphire with no visible damage or cracking to the surroundings.Keywords
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