Bismuth-induced structures on Si(001) surfaces
- 11 February 1999
- journal article
- Published by Elsevier BV in Surface Science
- Vol. 421 (3), 397-418
- https://doi.org/10.1016/s0039-6028(98)00870-x
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Surface preparation of Si substrates for epitaxial growthSurface Science, 1998
- Adsorption of bismuth on Si(001) studied by AES, REELS and mass spectrometrySurface Science, 1995
- Bi-induced reconstructions on Si(100)Physical Review B, 1994
- Adsorption of Bi on Si(001) surface: An atomic viewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Ordering of Missing-Row-Defects Forming (2×n)-Bi Phases on the Si(100) 2×1 Surface Studied by the Scanning Tunneling MicroscopyJapanese Journal of Applied Physics, 1993
- Which Surfactant Shall We Choose for the Heteroepitaxy of Ge/Si(001)? –Bi as a Surfactant with Small Self-Incorporation–Japanese Journal of Applied Physics, 1993
- Study of successive phase transitions of the Si(001)-Bi surface by RHEEDSurface Science, 1991
- A two-zone molecular-beam epitaxy furnace for evaporation of II–VI materialsJournal of Vacuum Science & Technology B, 1990
- Review of the Bi and Bi‐O vapor systemsThe Canadian Journal of Chemical Engineering, 1984
- Growth of Bismuth Layers on Si(100) SurfacesJapanese Journal of Applied Physics, 1981