Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices

Abstract

The CH₃NH₃PbI_3−xCl_x organic–inorganic hybrid perovskite material demonstrates remarkable resistive switching behavior, which can be applicable in resistive random access memory devices. The simply designed Au/CH₃NH₃PbI_3−xCl_x/FTO structure is fabricated by a low-temperature, solution-processable method, which exhibits remarkable bipolar resistive switching and nonvolatile properties.