Electrical characteristics of barium titanate films prepared by laser ablation

Abstract

The BaTiO₃ ferroelectric films of quality suitable for applying as dielectrics in 64 and 256 Mb dynamic random access memory have been successfully synthesized using the laser ablation technique. The dielectric constant and dielectric strength of the films are ε=200 and 1 MV/cm, respectively. The switching characteristics are Q_c=0.66 μc/cm², t_s=0.1 ps, and J₁=1.57 μA/cm² at 2.5 V, for charge storage density, writing time, and leakage current density, respectively. The quality of the BaTiO₃ films is superior to the Ta₂O₅ dielectric films and is comparable to the lead‐zirconate‐titanate ferroelectric films.