A Group-IV Ferromagnetic Semiconductor: Mn x Ge 1− x
- 25 January 2002
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 295 (5555), 651-654
- https://doi.org/10.1126/science.1066348
Abstract
We report on the epitaxial growth of a group-IV ferromagnetic semiconductor, Mn x Ge 1− x , in which the Curie temperature is found to increase linearly with manganese (Mn) concentration from 25 to 116 kelvin. The p -type semiconducting character and hole-mediated exchange permit control of ferromagnetic order through application of a ±0.5-volt gate voltage, a value compatible with present microelectronic technology. Total-energy calculations within density-functional theory show that the magnetically ordered phase arises from a long-range ferromagnetic interaction that dominates a short-range antiferromagnetic interaction. Calculated spin interactions and percolation theory predict transition temperatures larger than measured, consistent with the observed suppression of magnetically active Mn atoms and hole concentration.Keywords
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