Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
- 5 October 2002
- journal article
- Published by Elsevier BV in Microelectronic Engineering
- Vol. 65 (3), 259-272
- https://doi.org/10.1016/s0167-9317(02)00898-5
Abstract
No abstract availableKeywords
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