Second-harmonic generation and optical rectification using intersubband transitions in a biased p-type semiconductor quantum well

Abstract

We present new theoretical results for the second‐harmonic and optical rectification coefficients due to intersubband transitions within the valence subbands of a p‐type quantum well in a biased external electric field. The results are based on the density matrix approach. Both the parabolic band model and the heavy‐hole/light‐hole valence band mixing model are utilized. With a moderate electric field of 10 and 150 kV/cm, it is shown that the second‐order susceptibilities are many times larger than those of bulk GaAs. The valence band mixing model also gives rise to a broader resonance phenomenon than the parabolic band model.