Monte Carlo evaluation of spatial multiple-bit upset sensitivity to oblique incidence
- 1 May 2013
- journal article
- Published by IOP Publishing in Chinese Physics B
- Vol. 22 (5), 661-668
- https://doi.org/10.1088/1674-1056/22/5/059501
Abstract
We investigate the impact of heavy ion irradiation on a hypothetical static random access memory (SRAM) device. Influences of the irradiation angle, critical charge, drain–drain spacing, and dimension of device structure on the device sensitivity have been studied. These prediction and simulated results are interpreted with MUFPSA, a Monte Carlo code based on Geant4. The results show that the orientation of ion beams and device with different critical charge exert indispensable effects on multiple-bit upsets (MBUs), and that with the decrease in spacing distance between adjacent cells or the dimension of the cells, the device is more susceptible to single event effect, especially to MBUs at oblique incidence.Keywords
This publication has 13 references indexed in Scilit:
- Implementing Realistic Heavy Ion Tracks in a SEE Prediction Tool: Comparison Between Different ApproachesIEEE Transactions on Nuclear Science, 2012
- Monte Carlo Prediction of Heavy Ion Induced MBU Sensitivity for SOI SRAMs Using Radial Ionization ProfileIEEE Transactions on Nuclear Science, 2011
- Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAMIEEE Transactions on Nuclear Science, 2008
- Directional Sensitivity of Single Event Upsets in 90 nm CMOS Due to Charge SharingIEEE Transactions on Nuclear Science, 2007
- Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D SimulationsIEEE Transactions on Nuclear Science, 2007
- Charge Sharing Study in the Case of Neutron Induced SEU on 130 nm Bulk SRAM Modeled by 3-D Device SimulationIEEE Transactions on Nuclear Science, 2006
- The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAMIEEE Transactions on Nuclear Science, 2005
- Investigation of multi-bit upsets in a 150 nm technology SRAM deviceIEEE Transactions on Nuclear Science, 2005
- Comparisons of soft error rate for SRAMs in commercial SOI and bulk below the 130-nm technology nodeIEEE Transactions on Nuclear Science, 2003
- Geant4—a simulation toolkitNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2003