Theoretical study of the temperature dependence of 1.3-μm AlGaInAs-InP multiple-quantum-well lasers
- 1 December 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 32 (12), 2133-2138
- https://doi.org/10.1109/3.544760
Abstract
The temperature dependence of the differential gain, carrier density, and transparency current density for 1.3-/spl mu/m AlGaInAs-InP multiple-quantum-well lasers has been theoretically studied using the optical gain calculation from 250-380 K. The characteristic temperatures of the carrier density and differential gain at threshold are calculated to be 254 and 206 K, respectively. The Auger current density accounts for more than 50% of the total current density. The leakage current density exhibits the highest temperature sensitivity and becomes an essential part of the total current density at a high temperature. The calculated characteristic temperatures of the transparency and threshold current densities are 106 and 84 K, respectively, which agree well with the reported experimental results.Keywords
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