THE DIRECT ABSORPTION EDGE IN COVALENT SOLIDS
- 15 August 1967
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 11 (4), 138-140
- https://doi.org/10.1063/1.1755067
Abstract
Comparative measurements of the absorption edge of p‐type GaAs and compensated GaAs over a wide temperature range demonstrate that the shape of the edge in such materials is not dependent on phonon interactions, and is attributable to the state of charge of impurities in the material.This publication has 3 references indexed in Scilit:
- Solvable Model of a Hydrogenic System in a Strong Electric Field: Application to Optical Absorption in SemiconductorsPhysical Review B, 1966
- SECTION OF PHYSICAL SCIENCES: OPTICAL EFFECTS OF ELECTRIC FIELDS OF DEFECTS IN SOLIDS*Transactions of the New York Academy of Sciences, 1964
- Effect of Defect Fields on the Optical Absorption EdgePhysical Review B, 1963