Two-Dimensional Indirect Exciton in Layer-Type Semiconductor GaSe
- 23 June 1969
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 22 (25), 1379-1381
- https://doi.org/10.1103/physrevlett.22.1379
Abstract
Evidence for the presence of two-dimensional indirect excitions is presented in terms of the absorption spectra in GaSe. The phonon and exciton parameters at the point are determined.
Keywords
This publication has 5 references indexed in Scilit:
- Band Structures and Optical Properties of Semiconducting Layer Compounds GaS and GaSeJournal of the Physics Society Japan, 1968
- Band structure and optical properties of graphite and of the layer compounds GaS and GaSeIl Nuovo Cimento B (1971-1996), 1967
- Interband Optical Transitions in Extremely Anisotropic Semiconductors. I. Bound and Unbound Exciton AbsorptionJournal of the Physics Society Japan, 1966
- Nuclear Magnetic Resonance of Paramagnetic Co3O4. II. Theory of the NMR ShiftJournal of the Physics Society Japan, 1966
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957