Abstract
The electrical conductivity of amorphous Ge films ranging in thickness between 240 Å and 6 μm was measured both in the plane and in the transverse directions. A marked anisotropy in both the resistivity and its temperature dependence was observed below 0.4 μm. There are also marked differences in electrical properties between films deposited at 300°K and kept at 77°K, which are related to the structure of the films.