Annular Fast Electron Transport in Silicon Arising from Low-Temperature Resistivity
Open Access
- 28 August 2013
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 111 (9), 095001
- https://doi.org/10.1103/physrevlett.111.095001
Abstract
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.This publication has 29 references indexed in Scilit:
- On the investigation of fast electron beam filamentation in laser-irradiated solid targets using multi-MeV proton emissionPlasma Physics and Controlled Fusion, 2011
- Effect of self-generated magnetic fields on fast-electron beam divergence in solid targetsNew Journal of Physics, 2010
- High-Current, Relativistic Electron-Beam Transport in Metals and the Role of Magnetic CollimationPhysical Review Letters, 2009
- Isotope shift for the1Deautodetaching resonance in H−and D−Journal of Physics B: Atomic, Molecular and Optical Physics, 2009
- Electron beam hollowing in laser–solid interactionsPlasma Physics and Controlled Fusion, 2006
- Observation of annular electron beam transport in multi-TeraWatt laser-solid interactionsPlasma Physics and Controlled Fusion, 2006
- Alfvén limit in fast ignitionPhysical Review E, 2004
- How wrong is collisional Monte Carlo modeling of fast electron transport in high-intensity laser-solid interactions?Physical Review E, 2002
- Experimental measurements of deep directional columnar heating by laser-generated relativistic electrons at near-solid densityPhysical Review E, 2001
- Ab initioMolecular Dynamics Simulation of Laser Melting of SiliconPhysical Review Letters, 1996