We report on optical studies of relaxation processes in self‐organized InAs/GaAs quantum dots (QDs). Near resonant photoluminescence excitation spectra reveal a series of sharp lines. Their energy with respect to the detection energy does not depend on QD size and their energy separations are close to the InAs LO phonon energy of 32.1 meV estimated for strained pyramidal InAs QDs. The shape of the PLE spectra is explained by multiphonon relaxation processes involving LO phonons of the QD as well as of the wetting layer, an interface mode, and low frequency acoustical phonons.