Interface roughness and asymmetric current-voltage characteristics in resonant tunnelling
- 1 June 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (6), 600-603
- https://doi.org/10.1088/0268-1242/5/6/025
Abstract
The current plotted against voltage for a resonant tunnelling device having one rough interface has been calculated with first-order perturbation theory. The roughness gives rise to a small asymmetry in the characteristics for the two possible directions of the current. Other possible reasons for such observed asymmetries are also discussed.Keywords
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