A novel technique for the simultaneous measurement of ambipolar carrier lifetime and diffusion coefficient in silicon
- 30 September 1992
- journal article
- Published by Elsevier BV in Solid-State Electronics
- Vol. 35 (9), 1223-1227
- https://doi.org/10.1016/0038-1101(92)90153-4
Abstract
No abstract availableKeywords
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