Sixty Thousand Hour Light Output Reliability of AlGaInP Light Emitting Diodes
- 4 December 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Device and Materials Reliability
- Vol. 6 (4), 564-574
- https://doi.org/10.1109/tdmr.2006.887416
Abstract
Both fixed current density and variable current density stress conditions are used to study light output degradation of (AlxGa1-x)0.5In0.5P light-emitting diodes (LEDs) as functions of LED stress current and LED stress time. Quantification of the resulting data indicates that (AlxGa1-x)0.5In0.5P LED degradation, D, is a linear function of current density, J, and a logarithmic function of stress time, t, for stress times as long as 60 000 hours in duration. For stress times long enough and current densities high enough to saturate any short-term effects (AlxGa1-x)0.5In0.5P LED degradation is therefore quantified by the empirical equation D=D1 +D2J+(D3+D4J)ln(t), where D1 , D2, D3, and D4 are independent of LED stress current and LED stress time. Within the limits of the data presented here, this equation is shown to accurately describe light output degradation of individual LED lamps, the average degradation behavior of individual LED wafers, and the average degradation behavior of a distribution of multiple LED wafers. The resulting expression may thus provide helpful guidance in quantifying the tradeoff between LED flux and LED degradation, both of which depend linearly on current densityKeywords
This publication has 26 references indexed in Scilit:
- Effect of group II impurity and group III native defect on disordering Cu–Pt type ordered structures in In0.5(AlxGa1−x)0.5P layersJournal of Applied Physics, 2002
- Illumination with solid state lighting technologyIEEE Journal of Selected Topics in Quantum Electronics, 2002
- Identification of aging mechanisms in the optical and electrical characteristics of light-emitting diodesApplied Physics Letters, 2001
- Influence of deep level impurities on modulation response of InGaP light emitting diodesJournal of Applied Physics, 2001
- High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiencyApplied Physics Letters, 1999
- Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealingApplied Physics Letters, 1998
- High-brightness AlGaInP light emitting diodesProceedings of the IEEE, 1997
- Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sourcesIEEE Journal of Quantum Electronics, 1984
- Recombination-enhanced migration of interstitial aluminum in siliconPhysical Review B, 1979
- Capacitance Transient SpectroscopyAnnual Review of Materials Science, 1977