Applications of GaN HEMTs and SiC MESFETs in High Efficiency Class-E Power Amplifier Design for WCDMA Applications
- 1 June 2007
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 1099-1102
- https://doi.org/10.1109/mwsym.2007.380285
Abstract
This paper presents high efficiency class-E power amplifiers using wide-bandgap devices such as GaN HEMT and SiC MESFET, which are designed at WCDMA band of 2.14 GHz. The output network using transmission lines is implemented to suppress harmonics and minimize losses. Measured results of the class-E power amplifier using wide-bandgap devices for a single tone have been compared to that of the class-E Si LDMOS power amplifier. For GaN HEMT and SiC MESFET cases, the power-added efficiency (PAE) of 70% with a gain of 13.0 dB and 72.3% with a gain of 10.3 dB are achieved at an output power of 43.0 dBm and 40.3 dBm, respectively, through significant reduction of harmonic power levels.Keywords
This publication has 7 references indexed in Scilit:
- An enhanced empirical large signal model of SiC MESFETs for power applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2006
- Lumped-element load-network design for class-E power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2006
- Applications of SiC MESFETs and GaN HEMTs in power amplifier designPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Linearity characteristics of microwave-power GaN HEMTsIEEE Transactions on Microwave Theory and Techniques, 2003
- A new empirical large-signal model of Si LDMOSFETs for high-power amplifier designIEEE Transactions on Microwave Theory and Techniques, 2001
- Transmission-line load-network topology for class-E power amplifiersIEEE Transactions on Microwave Theory and Techniques, 2001
- Tuning analysis for the high-Q class-E power amplifierIEEE Transactions on Microwave Theory and Techniques, 2000