Calorimetric evidence for structural relaxation in amorphous silicon
- 17 April 1989
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 62 (16), 1880-1883
- https://doi.org/10.1103/physrevlett.62.1880
Abstract
Differential scanning calorimetry of amorphous silicon (a-Si) prepared by ion implantation shows a one-time low-temperature heat release, equal to one-third of the heat of crystallization. This heat release is direct evidence for structural relaxation of a-Si. It is in agreement with predictions made on the basis of Raman spectrometry.Keywords
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