Effect of Y, Gd, Dy, and Ce Doping on the Microstructural and Electrical Properties of Sol-Gel-Deposited ZrO2 Film
- 1 January 2011
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 158 (6), G133-G136
- https://doi.org/10.1149/1.3562971
Abstract
ZrO2 films doped with Y, Gd, Dy, and Ce at a concentration of ∼13 cation atom % were deposited by a sol-gel technique, and the early-stage dopant effect on the stabilization of the high temperature phase and dielectric properties was systematically compared after a low-temperature annealing process (400°C). The high temperature phase formation of the ZrO2 films was hindered by the Y, Gd, and Dy doping, thereby reducing the dielectric constant. In addition, the hysteresis was significantly increased via electron trapping, which was attributed to the increase in the number of oxygen vacancies possibly due to the difference in the valence number of the dopants with that of the substituted Zr atoms. However, the dielectric constant of the ZrO2 film doped with tetravalent Ce atoms increased without retarding the stabilization of the high temperature phase and degrading the hysteresis characteristics.Keywords
This publication has 17 references indexed in Scilit:
- A first-principles study of enhanced dielectric responses in Ti and Ce doped HfO2Applied Physics Letters, 2009
- Atomic Layer Deposition of High-Permittivity Yttrium-Doped HfO[sub 2] FilmsElectrochemical and Solid-State Letters, 2009
- Gate Oxides Beyond SiO2MRS Bulletin, 2008
- First-principles study on doping and phase stability ofPhysical Review B, 2008
- The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principlesApplied Physics Letters, 2008
- Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin filmsApplied Physics Letters, 2007
- Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3Applied Physics Letters, 2006
- Dielectric constant enhancement due to Si incorporation into HfO2Applied Physics Letters, 2006
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000