A fast-switching SOI SA-LIGBT without NDR region
- 7 November 2002
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
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- Lateral insulated-gate bipolar transistor (LIGBT) with a segmented anode structureIEEE Electron Device Letters, 1991
- Fast switching lateral insulated gate transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1986