Record Maximum Oscillation Frequency in C-Face Epitaxial Graphene Transistors
- 21 February 2013
- journal article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 13 (3), 942-947
- https://doi.org/10.1021/nl303587r
Abstract
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high-frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high κ dielectric T-gate and self-aligned contacts further contributed to the record-breaking fmax.Keywords
This publication has 31 references indexed in Scilit:
- State-of-the-Art Graphene High-Frequency ElectronicsNano Letters, 2012
- A role for graphene in silicon-based semiconductor devicesNature, 2011
- Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel MorphologyIEEE Electron Device Letters, 2011
- Wafer-Scale Graphene Integrated CircuitScience, 2011
- Scalable templated growth of graphene nanoribbons on SiCNature Nanotechnology, 2010
- Graphene transistorsNature Nanotechnology, 2010
- Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC SubstratesIEEE Electron Device Letters, 2009
- Epitaxial Graphene Transistors on SiC SubstratesIEEE Transactions on Electron Devices, 2008
- Half-terahertz operation of SiGe HBTsIEEE Electron Device Letters, 2006
- Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based NanoelectronicsThe Journal of Physical Chemistry B, 2004