Full Three-Dimensional Simulation of Ion-Sensitive Field-Effect Transistor Flatband Voltage Shifts Due to DNA Immobilization and Hybridization
- 20 January 2010
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 49 (1), 01AG07
- https://doi.org/10.1143/jjap.49.01ag07
Abstract
No abstract availableKeywords
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