Performance Analysis of Graphene Bilayer Transistors Through Tight-Binding Simulations
- 1 May 2009
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A simulation study of a tunable-gap bilayer graphene FET with independent gates is performed with a numerical solver based on the self-consistent solution of the Poisson and Schrodinger equations within the NEGF formalism. The applied vertical field manages to induce an energy gap, but its value is not large enough to suppress band-to-band tunneling and to obtain acceptable I ON /I OFF ratio for CMOS device operation.Keywords
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