Dynamic characteristics of high-speed In0.4Ga0.6As/GaAs self-organized quantum dot lasers at room temperature

Abstract

We have measured the room-temperature modulation characteristics of self-organized In 0.4 Ga 0.6 As/GaAs quantum dot lasers in which electrons are injected into the dot lasing states by tunneling. A small-signal modulation bandwidth of f −3 dB =22 GHz is measured. Values of differential gain at 288 K of dg/dn≅8.85×10 −14 cm 2 and gain compression factor ε=7.2×10 −16 cm 3 are derived from the modulation data. Extremely low values of linewidth enhancement factor α∼1 and chirp <0.6 Å were also measured in the devices.