Superconductivity protected by spin–valley locking in ion-gated MoS2
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- 7 December 2015
- journal article
- letter
- Published by Springer Science and Business Media LLC in Nature Physics
- Vol. 12 (2), 144-149
- https://doi.org/10.1038/nphys3580
Abstract
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This publication has 46 references indexed in Scilit:
- Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2Nature Nanotechnology, 2015
- Piezoelectricity of single-atomic-layer MoS2 for energy conversion and piezotronicsNature, 2014
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- Coupled Spin and Valley Physics in Monolayers ofand Other Group-VI DichalcogenidesPhysical Review Letters, 2012
- Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductorsPhysical Review B, 2011
- Atomically Thin: A New Direct-Gap SemiconductorPhysical Review Letters, 2010
- Superconductivity without Inversion Symmetry: MnSi versusPhysical Review Letters, 2004
- Two-dimensional superconductivity with strong spin-orbit interactionPhysical Review B, 2002
- Superconducting 2D System with Lifted Spin Degeneracy: Mixed Singlet-Triplet StatePhysical Review Letters, 2001
- Superconductivity in a Strong Spin-Exchange FieldPhysical Review B, 1964