Diffusion Studies of Copper on Ruthenium Thin Film

Abstract

Diffusion studies were carried out on physical vapor deposited Cu/Ru(∼20 nm)/Si samples using secondary ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). Back side SIMS depth profiling revealed well-defined interfaces and showed that Cu interdiffusion was impeded by Ru thin film up to 450°C vacuum annealing. TEM showed a 20-22 nm Ru barrier layer with a columnar microstructure oriented vertically with respect to Si substrate. TEM results corroborate with SIMS data to indicate stability of the Ru film barrier for annealing temperatures up to 450°C. Direct Cu electroplating on ultrathin Ru barrier layers (<20 nm) was investigated in sulfuric acid. The electroplated Cu film is shiny, smooth, and without agglomeration under scanning electron microscopy. Excellent adhesion between interfacial layers was confirmed by the scribe-peel test. The interfacial characterization results indicate that Ru thin film is a promising candidate as a directly plateable Cu diffusion barrier. © 2004 The Electrochemical Society. All rights reserved.