Enhancement-Mode Insulating-Gate AlInN/AlN/GaN Heterostructure Field-Effect Transistors with Threshold Voltage in Excess of +1.5 V
- 18 October 2011
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 4 (11), 114101
- https://doi.org/10.1143/apex.4.114101
Abstract
No abstract availableKeywords
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